Process of forming an isolation structure

Details Process of forming an isolation structure Process of forming an isolation structure

1988-03-24

1989-09-19

Chauchuri, Olik

Fishing, trapping, and vermin destroying

437 67, 437 73, 357 55, H01L 21265, H01L 21302

Patent

active

048681369

ABSTRACT:
Two thin wedges of oxide extending along and from the boundaries of the field oxide layer without solution of continuity inside the substrate for a depth such as to separate dielectrically the region of silicon, present underneath the field oxide layer, having a doping level higher than the doping level of the bulk of the substrate and the regions of oppositely doped silicon in a MOS device allow obtaining simultaneously a high threshold voltage of the parasitic transistor, a high junction breakdown voltage and an excellent immunity to "Reach-through" between the depletion regions of uncorrelated junctions together with a reduced capacitance of the junctions and an improved geometry. Such wedges of oxide are obtained by means of deep anisotropic etch of silicon through a suitably exposed area, for example by means of an overetch of the nitride used for growing the thick oxide layer according to the known technique and by the subsequent filling of the deep etch with thermally grown silicon oxide.

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patent: 4611386 (1986-09-01), Goto
Wu, et al. "The Influence of the Locos Processing Parameters on the Shape of the Bird's Beak Structure", J. Electrochem. Soc.: Solid-State Science and Technology, Jul. 1983.
Morandi, International Electron Devices Meeting, Session 18: Integrated Electronics IV-Process Technology, Oct. 31, 1969, p. 126.

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