Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-08-22
2006-08-22
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S506000, C438S294000
Reexamination Certificate
active
07095093
ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a substrate top surface on which a device should be formed; a gate electrode having an opposed surface opposed to said substrate top surface, and electrically insulated from said semiconductor substrate by a gate insulating film, a trench formed through said gate electrode into said semiconductor substrate to electrically isolate a device region for forming a device from the remainder region of said substrate top surface, a first boundary end portion, which is defined between a substrate side surface of said semiconductor substrate forming a part of the side surface of said trench and said substrate top surface, and a second boundary end portion, which is defined between a gate side surface of said gate electrode forming another part of the side surface of said trench and said opposed surface, wherein said first boundary end portion and said second boundary end portion have spherical shapes having a curvature radius not smaller than 30 angstrom.
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Iguchi Tadashi
Matsuno Koichi
Tsunoda Hiroaki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Flynn Nathan J.
Kabushiki Kaisha Toshiba
Sefer Ahmed N.
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