Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2006-02-28
2006-02-28
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S704000
Reexamination Certificate
active
07005732
ABSTRACT:
A method for fabricating a MEMS device having a top cap and an upper sense plate is described. The method includes producing a device wafer including an etched substrate, etched MEMS device components, and interconnect metal, a portion of the interconnect metal being bond pads and adding a metal wraparound layer to a back side, edges, and a portion of a front side of the device wafer. The method also includes producing an upper wafer including an etched substrate and interconnect metal, bonding the device wafer and the upper wafer, and dicing the bonded upper wafer and device wafer into individual MEMS devices.
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International Search Report dated Aug. 1, 2005, Application No. PCT/US 2004/034591, 10 pages.
Horning Robert D.
Ridley Jeffrey A.
Abeyta, Esq. Andrew
Armstrong Teasdale LLP
Pham Hoai
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