Color imager cell with transistors formed under the photodiodes

Details Color imager cell with transistors formed under the photodiodes Color imager cell with transistors formed under the photodiodes

2006-06-27

2006-06-27

Tsai, H. Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S462000, C257S465000

Reexamination Certificate

active

07067895

ABSTRACT:
An imaging cell and a method of forming the imaging cell are disclosed. The imaging cell includes a first transistor that has source, a drain, and a gate, and a second transistor that has a source, a drain, and a gate connected to the source of the first transistor. In addition, the cell has a photodiode that is partially formed over the source of the second transistor.

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Retrieved from Purdue University Website using Internet <URL: http://www.purdue.edu/UNS/html4ever/9907.Neudeck.chips.html, “Engineers Way to Faster, Less-Costly, Computer Chips”, Purdue News, Aug. 1999, pp. 1-4, [online], [retrieved on Jan, 10, 2003].
Retrieved from Silicon Vision Website using Internet <URL: http://www.siliconvision.de, “Introduction to TFA”, 1 page, [online], [retrieved on Jan. 10, 2003].

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