Method for erasing an NROM cell

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185180, C365S185190, C365S185220, C365S185240, C365S185290

Reexamination Certificate

active

07085170

ABSTRACT:
An operation to erase a nitride read only memory (NROM) memory block starts by erasing the memory block. An erase verify operation can then be performed to determine the success of the erase. If a read operation is performed and column current is detected, a high-efficiency recovery operation is performed. If the read operation is performed and column current is not detected, the erase operation has been successfully completed.

REFERENCES:
patent: 4184207 (1980-01-01), McElroy
patent: 4420504 (1983-12-01), Cooper
patent: 4755864 (1988-07-01), Ariizumi
patent: 4881114 (1989-11-01), Mohsen
patent: 5241496 (1993-08-01), Lowrey
patent: 5330930 (1994-07-01), Chi
patent: 5378647 (1995-01-01), Hong
patent: 5379253 (1995-01-01), Bergemont
patent: 5397725 (1995-03-01), Wolstenholme
patent: 5467305 (1995-11-01), Bertin
patent: 5576236 (1996-11-01), Chang
patent: 5576992 (1996-11-01), Mehrad
patent: 5768192 (1998-06-01), Eitan
patent: 5792697 (1998-08-01), Wen
patent: 5858841 (1999-01-01), Hsu
patent: 5909392 (1999-06-01), Chang et al.
patent: 5911106 (1999-06-01), Tasaka
patent: 5946558 (1999-08-01), Hsu
patent: 5966603 (1999-10-01), Eitan
patent: 5994745 (1999-11-01), Hong
patent: 6011725 (2000-01-01), Eitan
patent: 6028342 (2000-02-01), Chang
patent: 6030871 (2000-02-01), Eitan
patent: 6044022 (2000-03-01), Nachumovsky
patent: 6081456 (2000-06-01), Dadashev
patent: 6108240 (2000-08-01), Lavi
patent: 6133102 (2000-10-01), Wu
patent: 6134156 (2000-10-01), Eitan
patent: 6147904 (2000-11-01), Liron
patent: 6157570 (2000-12-01), Nachumovsky
patent: 6160739 (2000-12-01), Wong
patent: 6172396 (2001-01-01), Chang
patent: 6172909 (2001-01-01), Haddad et al.
patent: 6174758 (2001-01-01), Nachumovsky
patent: 6175523 (2001-01-01), Yang
patent: 6181597 (2001-01-01), Nachumovsky
patent: 6184089 (2001-02-01), Chang
patent: 6201282 (2001-03-01), Eitan
patent: 6201737 (2001-03-01), Hollmer
patent: 6204529 (2001-03-01), Lung
patent: 6207504 (2001-03-01), Hsieh
patent: 6208557 (2001-03-01), Bergemont
patent: 6215702 (2001-04-01), Derhacobian
patent: 6218695 (2001-04-01), Nachumovsky
patent: 6222768 (2001-04-01), Hollmer
patent: 6240020 (2001-05-01), Yang
patent: 6243300 (2001-06-01), Sunkavalli
patent: 6251731 (2001-06-01), Wu
patent: 6255166 (2001-07-01), Ogura
patent: 6256231 (2001-07-01), Lavi
patent: 6266281 (2001-07-01), Derhacobian
patent: 6269023 (2001-07-01), Derhacobian
patent: 6272043 (2001-08-01), Hollmer
patent: 6275414 (2001-08-01), Randolph
patent: 6282118 (2001-08-01), Lung
patent: 6291854 (2001-09-01), Peng
patent: 6297096 (2001-10-01), Boaz
patent: 6303436 (2001-10-01), Sung
patent: 6327174 (2001-12-01), Jung
patent: 6330192 (2001-12-01), Ohba et al.
patent: 6348711 (2002-02-01), Eitan
patent: 6381177 (2002-04-01), De Sandre et al.
patent: 6381179 (2002-04-01), Derhacobian
patent: 6392930 (2002-05-01), Jung
patent: 6417053 (2002-07-01), Kuo
patent: 6421275 (2002-07-01), Chen
patent: 6429063 (2002-08-01), Eitan
patent: 6432778 (2002-08-01), Lai
patent: 6461949 (2002-10-01), Chang
patent: 6468864 (2002-10-01), Sung
patent: 6469342 (2002-10-01), Kuo
patent: 6477084 (2002-11-01), Eitan
patent: 6486028 (2002-11-01), Chang
patent: 6487050 (2002-11-01), Liu
patent: 6496417 (2002-12-01), Shiau et al.
patent: 6498377 (2002-12-01), Lin
patent: 6498752 (2002-12-01), Hsu et al.
patent: 6514831 (2003-02-01), Liu
patent: 6531887 (2003-03-01), Sun
patent: 6545309 (2003-04-01), Kuo
patent: 6552287 (2003-04-01), Eitan
patent: 6552387 (2003-04-01), Eitan
patent: 6559013 (2003-05-01), Pan
patent: 6576511 (2003-06-01), Pan
patent: 6580135 (2003-06-01), Chen
patent: 6580630 (2003-06-01), Liu
patent: 6602805 (2003-08-01), Chang
patent: 6607957 (2003-08-01), Fan
patent: 6610586 (2003-08-01), Liu
patent: 6613632 (2003-09-01), Liu
patent: 6617204 (2003-09-01), Sung
patent: 6873550 (2005-03-01), Mihnea
patent: 6885060 (2005-04-01), Nomoto et al.
patent: 2001/0001075 (2001-05-01), Ngo
patent: 2001/0004332 (2001-06-01), Eitan
patent: 2001/0011755 (2001-08-01), Tasaka
patent: 2001/0048612 (2001-12-01), Yi
patent: 2002/0000606 (2002-01-01), Eitan
patent: 2002/0142569 (2002-10-01), Chang
patent: 2002/0146885 (2002-10-01), Chen
patent: 2002/0151138 (2002-10-01), Liu
patent: 2002/0177275 (2002-11-01), Liu
patent: 2002/0182829 (2002-12-01), Chen
patent: 2002/0190385 (2002-12-01), Chen
patent: 2003/0057997 (2003-03-01), Sun
patent: 2003/0067807 (2003-04-01), Lin
patent: 2003/0072192 (2003-04-01), Bloom
patent: 2003/0076710 (2003-04-01), Sofer et al.
patent: 2003/0117861 (2003-06-01), Maayan
patent: 2003/0134473 (2003-07-01), Sung
patent: 2003/0235100 (2003-12-01), Pascucci
patent: 2004/0102026 (2004-05-01), Wong et al.
patent: 2004/0185619 (2004-09-01), Chung
patent: 84303740.9 (1985-01-01), None
patent: 90115805.5 (1991-02-01), None
patent: 01113179.4 (2002-12-01), None
B. Eitan et al., “Characterization of Channel Hot Electron Injection by the Subthreshold Slope of NROM™ Device,” IEEE Electron Device Lett., vol. 22, No. 11, (Nov. 2001) pp. 556-558, Copyright 2001 IEEE.
B. Eitan et al., “Spatial Characterization of Hot Carriers Injected into the Gate Dielectric Stack of a MOFSET Based on Non-Volatile Memory Device,” date unknown, pp. 58-60.
B. Eitan et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Lett, vol. 21, No. 11, (Nov. 2000), pp. 543-545, Copyright 2000 IEEE.
E. Maayan et al., “A 512Mb NROM Flash Data Storage Memory with 8MB/s Data Range,” Dig. IEEE Int. Solid-State Circuits Conf., San Francisco, (Feb. 2002), pp. 1-8, Copyright Saifun Semiconductors Ltd. 2002.
E. Maayan et al., “A 512Mb NROM Flash Data Storage Memory with 8MB/s Data Range,” ISSCC 2002 Visuals Supplement, Session 6, SRAM and Non-Volatile Memories, 6.1 and 6.2, pp. 76-77, 407-408. Copyright 1990 IEEE.
M. Janai, “Data Retention, Endurance and Acceleration Factors of NROM Devices,” IEEE 41stAnnual International Reliability Physics Symposium, Dallas, TX (2003), pp. 502-505, Copyright 1989 IEEE.
S. Minami and Y. Kamigaki, “A Novel MONOS Nonvolatile Memory Device Ensuring 10-Year Data Retention after 107Erase/Write Cycles,” IEEE Transactions on Electron Devices, vol. 40, No. 11 (Nov. 1993) pp. 2011-2017, Copyright 1998 IEEE.
C. Pan, K. Wu, P. Freiberger, A. Chatterjee, G. Sery, “A Scaling Methodology for Oxide-Nitride-Oxide Interpoly Dielectric for EPROM Applications,” IEEE Transactions on Electron Devices, vol. 37, No. 6, (Jun. 1990), pp. 1439-1443, Copyright 1990 IEEE.
P. Manos and C. Hart, “A Self-Aligned EPROM Structure with Superior Data Retention,” IEEE Electron Device Letters, vol. 11, No. 7, (Jul. 1990) pp. 309-311, Copyright 1990 IEEE.
W. Owen and W. Tchon, “E2PROM Product Issues and Technology Trends,” IEEE 1989, pp. 17-19, Copyright 1989 IEEE.
T. Huang, F. Jong, T. Chao, H. Lin, L. Leu, K. Young, C. Lin, K. Chiu, “Improving Radiation Hardness of EEPROM/Flash Cell BY N20 Annealing,” IEEE Electron Device Letters, vol. 19, No. 7 (Jul. 1998), pp. 256-258, Copyright 1998 IEEE.
B. Eitan et al., “Electrons Retention Model for Localized Charge in Oxide -Nitride-Oxide (ONO) Dielectric,” IEEE Device Lett., vol. 23, No. 9, (Sep. 2002), pp. 556-558. Copyright 2002 IEEE.
T. Nozaki, T. Tanaka, Y. Kijiya, E. Kinoshita, T. Tsuchiya, Y. Hayashi, “A 1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application,” IEEE Journal of Solid-State Circuits, vol. 26, No. 4 (Apr. 1991), pp. 497-501, Copyright 1991 IEEE.
F. Vollebregt, R. Cuppens, F. Druyts, G. Lemmen, F. Verberne, J. Solo, “A New E(E)PROM Technology With A TiSi2Control Gate,” IEEE 1989, pp. 25.8.1-25.8.4, Copyright 1989 IEEE.
B. Eitan et al., “Impact of Programming Charge Distribution on Threshold Voltage and Subthreshold Slope of NROM Memory cells,” IEEE Transactions on Electron Devices, vol. 49, No. 11, (Nov. 2002), pp. 1939-1946, Copyright 2002 IEEE.
B. Eitan et al., “Spatial characterization of Channel hot electron injection

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for erasing an NROM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for erasing an NROM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for erasing an NROM cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3681607

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.