Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-11-07
2006-11-07
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S080000, C257S082000, C257S089000, C257S093000, C257S098000, C257S103000
Reexamination Certificate
active
07132691
ABSTRACT:
It has a structure in which an active layer (5) that emits light by electric current injection is sandwiched between an n-type cladding layer (4) and a p-type cladding layer (6) made of materials having a larger band gap than the active layer (5), wherein the active layer (5) is made, for example, of CdxZn1−xO (0≦x<1). It is further more preferable if the cladding layers (4), (6) are made, for example, of MgyZn1−yO (0≦y<1). This narrows the band gap of the ZnO materials, and an oxide semiconductor capable of being wet-etched, easy to handle with, and excellent in crystallinity can be used as a material for an active layer or a cladding layer of a semiconductor light emitting device such as a blue light emitting diode or a blue laser diode in which an active layer is sandwiched between cladding layers, so that a blue semiconductor light emitting device being excellent in light emission characteristics can be obtained.
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Nakahara Ken
Tanabe Tetsuhiro
Arent & Fox PLLC
Louie Wai-Sing
Pham Long
Rohm & Co., Ltd.
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