Method of fabricating SOI wafer

Details Method of fabricating SOI wafer Method of fabricating SOI wafer

2006-08-01

2006-08-01

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C257SE21568

Reexamination Certificate

active

07084046

ABSTRACT:
After completion of annealing for bonding of the base wafer1and bond wafer2, the bond wafer2is thinned to a first thickness suitable for ion implantation, and boron is ion-implanted to thereby form a high-boron-concentration layer10. A second thinning step based on selective etching is then carried out while using the high-boron-concentration layer10as an etch stop layer. This is successful in providing a method of fabricating an SOI wafer which is suppressed both in intra-wafer uniformity of the firm thickness and in inter-wafer uniformity of the film thickness even when a required level for the thickness of the SOI layer is extremely small.

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