Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-08-08
2006-08-08
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257SE33043
Reexamination Certificate
active
07087934
ABSTRACT:
A semiconductor light emitting device includes a crystal growth layer, and a crystal layer composed of a first conductive type layer, an active layer, and a second conductive type layer. The crystal layer is provided on the upper side of the crystal growth layer. In this device, a back plane of the crystal growth layer has irregularities. Since light generated in the device is prevented from being totally reflected from the back plane of the crystal growth layer, the light emergence efficiency of the device can be increased.
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Doi Masato
Oohata Toyoharu
Bell Boyd & Lloyd LLC
Coleman W. David
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