Semiconductor light emitting device, image display unit,...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE33043

Reexamination Certificate

active

07087934

ABSTRACT:
A semiconductor light emitting device includes a crystal growth layer, and a crystal layer composed of a first conductive type layer, an active layer, and a second conductive type layer. The crystal layer is provided on the upper side of the crystal growth layer. In this device, a back plane of the crystal growth layer has irregularities. Since light generated in the device is prevented from being totally reflected from the back plane of the crystal growth layer, the light emergence efficiency of the device can be increased.

REFERENCES:
patent: 5434434 (1995-07-01), Kasahara et al.
patent: 5923045 (1999-07-01), Nihashi et al.
patent: 6734030 (2004-05-01), Doi et al.
patent: 1-112502 (1989-07-01), None
patent: 9-051124 (1997-02-01), None
patent: 9-115667 (1997-05-01), None
patent: 10-012382 (1998-01-01), None
patent: 10-106327 (1998-04-01), None
Applied Physics Letters, vol. 76, No. 22, May 29, 2000, Selective Growth of InGaN Quantum Dot Structures And Their Microphotoluminescence At Room Temperature, Tachibana et al., pp. 3212-3214.
Journal of Crystal Growth, vol. 204, No. 3, Jul. 11, 1999, Singe-Crystal GaN Pyramids Grwon On (111) Si Substrates By Selective Lateral Overgrowth, Stringfellow et al., pp. 270-274.
J. Wang et al., Fabrication Of Nanoscale Of InGaN by MOCVD Lateral Overgrowth, Journal of Crystal Growth 197 (1999), pp. 48-53.
A.J. Glass and A. H. Guenther, “Laser induced damage in optical materials: 7th ASTM symposium”, Applied Optics, vol. 15, No. 6, Jun. 1976, pp. 1510-1529.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor light emitting device, image display unit,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device, image display unit,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device, image display unit,... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3677405

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.