Semiconductor resistor element having improved resistance tolera

Details Semiconductor resistor element having improved resistance tolera Semiconductor resistor element having improved resistance tolera

1997-02-18

2000-04-04

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257536, H01L 2900

Patent

active

060464917

ABSTRACT:
A semiconductor resistor element that is able to remove the effect of an electric potential change of a wiring conductor is provided. This element includes a first semiconductor resistor region formed in a surface area of a substructure, a second semiconductor resistor region electrically connected to a first end of the first resistor region, a third semiconductor resistor region electrically connected to a second end of the first resistor region. The first resistor region has a first doping concentration. The second resistor region has a second doping concentration higher than the first doping concentration. The third resistor region has a third doping concentration equal to the second doping concentration. The second and third resistor regions serve as a pair of terminals of the semiconductor resistor element. The second and third resistor regions may be contacted with or apart from the respective ends of the first resistor region. In the latter case, the second and third resistor regions are electrically connected to the ends of the first resistor region through interconnection conductors, respectively.

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