Semiconductor laser diode with removable high reflection...

Details Semiconductor laser diode with removable high reflection... Semiconductor laser diode with removable high reflection...

2006-11-14

2006-11-14

Flynn, Nathan J. (Department: 2826)

Coherent light generators

Particular active media

Semiconductor

C372S039000, C372S043010, C372S044010

Reexamination Certificate

active

07136407

ABSTRACT:
Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes an n-type compound semiconductor layer; a resonant layer stacked on a predetermined region of the n-type compound semiconductor layer; a p-type compound semiconductor layer formed on the resonant layer; electrodes respectively formed on each of the p-type and n-type compound semiconductor layers; a bonding metal film stacked on the electrodes; and a high reflection film stacked on the other surface of the resonant layer facing a surface through which a laser generated from the resonant layer is emitted, wherein the thickness of the bonding metal film is greater than that of the high reflection film.

REFERENCES:
patent: 6647047 (2003-11-01), Yokota
patent: 6720582 (2004-04-01), Miyokawa et al.
patent: 2004/0233956 (2004-11-01), Sano
“CRC Handbook of Chemistry and Physics,” ed. David Lide, 2000, CRC Press, 81st edition, p. 12-197 to 12-198.

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