High sensitivity active pixel with electronic shutter

Details High sensitivity active pixel with electronic shutter High sensitivity active pixel with electronic shutter

1997-12-08

2000-04-04

Lee, John R

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250214A, 348308, G11C 1930, H01L 2702, H01L 27146

Patent

active

060464445

ABSTRACT:
A high sensitivity active pixel for use in MOS image sensor circuits. The pixel circuit design allows the use of digital MOS fabrication processes to be used in implementing a pixel circuit having greater sensitivity (allowing increased frame rate) and greater noise immunity than certain prior art pixels. The novel pixel features a source follower configured amplifier, such as a single MOS FET, coupled between a photodetector and a storage capacitor. A light-generated signal from the photodetector is used to control the charge placed in the storage capacitor in order to develop a capture voltage. In a particular embodiment, an n-channel source follower and a p-channel output stage are combined in the pixel to make the overall transfer function of the pixel more linear and distortion-free. In particular, the pixel transfer function becomes more linear for weak light-generated signals, whereas with conventional pixels, the pixel output signals are often distorted and even suppressed when the light-generated signal is weak. The novel pixel circuit may find particular use in a portable digital image capture system such as a digital camera.

REFERENCES:
patent: 5471515 (1995-11-01), Fossum et al.
patent: 5541402 (1996-07-01), Ackland et al.
patent: 5614744 (1997-03-01), Merrill
patent: 5835141 (1998-11-01), Ackland et al.
patent: 5841126 (1998-11-01), Fossum et al.
patent: 5841176 (1998-11-01), Merrill
patent: 5844598 (1998-12-01), Janesick
patent: 5847422 (1998-12-01), Chi et al.
patent: 5854100 (1998-12-01), Chi

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