Multi quantum well semiconductor laser and optical communication

Details Multi quantum well semiconductor laser and optical communication Multi quantum well semiconductor laser and optical communication

1994-12-29

1997-04-15

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 318

Patent

active

056217471

ABSTRACT:
A multi quantum well semiconductor laser includes an InP substrate and a multi-layered structure formed on the InP substrate, lasing at 1.29 .mu.m to 1.33 .mu.m wavelength, wherein the multi-layered structure includes at least a multi quantum well active layer, the multi quantum well active layer including InGaAsP well layers and InGaAsP barrier layers alternately provided, the InGaAsP barrier layers are lattice matched with the InP substrate, and a bandgap wavelength of the InGaAsP barrier layers is substantially equal to 1.05 .mu.m.

REFERENCES:
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EPO Communication (94103790.5-2214) dated Aug. 14 1995.
M. Kito et al., "Low Distortion up to 2 GHz in 1.55 .mu.m Multiquantum Well Distributed-Feedback Laser", Electronics Letters, Apr. 23, 1992, vol. 28, No. 9, pp. 891-892.
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