Semiconductor light emitting element

Details Semiconductor light emitting element Semiconductor light emitting element

2006-02-28

2006-02-28

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S095000, C257S102000, C257S103000

Reexamination Certificate

active

07005682

ABSTRACT:
A semiconductor light emitting element of a monolithic structure, including: a first-conductivity-type semiconductor substrate; an active layer formed on the first-conductivity-type semiconductor substrate; a second-conductivity-type clad layer formed on the active layer; and a current diffusion layer formed on the second-conductivity-type clad layer, wherein the active layer is of a first conductivity type.

REFERENCES:
patent: 6236065 (2001-05-01), Kurahashi et al.
patent: 6621106 (2003-09-01), Murakami et al.
patent: 58-066370 (1983-04-01), None
patent: 58-223380 (1983-12-01), None

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