Multilayer reflective extreme ultraviolet lithography mask...

Details Multilayer reflective extreme ultraviolet lithography mask... Multilayer reflective extreme ultraviolet lithography mask...

2006-02-14

2006-02-14

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

06998202

ABSTRACT:
An extreme ultraviolet lithography mask may be formed of a multilayered stack covered by a spacer layer, such as silicon or boron carbide, in turn covered by a thin layer to prevent inter-diffusion, and finally covered by a capping layer of ruthenium. By optimizing the spacer layer thickness based on the capping layer, the optical properties may be improved.

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patent: 1 394 815 (2004-03-01), None
patent: 2003-249434 (2003-09-01), None
M. Singh et al.,Capping Layers For Extreme-Ultraviolet Multilayer Interference Coatings; Optics Letters, Optical Society of America, Washington, vol. 26, No. 5, Mar. 1, 2001, pp. 259-261.

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