Semiconductor device

Details Semiconductor device Semiconductor device

2006-12-05

2006-12-05

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S200000, C257S201000, C257S616000

Reexamination Certificate

active

07145168

ABSTRACT:
On an Si substrate1, a buffer layer2, a SiGe layer3, and an Si cap layer4are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench7ais formed so as to reach the Si substrate1and have the side faces of the SiGe layer3exposed. Then, the surface of the trench7ais subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer3is evaporated. Thus, a Ge evaporated portion8having a lower Ge content than that of other part of the SiGe layer3is formed in part of the SiGe layer3exposed at part of the trench7a. Thereafter, the walls of the trench7aare oxidized.

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