Semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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C257S745000, C257S762000, C257S768000

Reexamination Certificate

active

06998649

ABSTRACT:
A semiconductor light-emitting device capable of attaining a surface plasmon effect while attaining excellent ohmic contact is provided. This semiconductor light-emitting device comprises a semiconductor layer formed on an emission layer, a first electrode layer formed on the semiconductor layer and a second electrode layer, formed on the first electrode layer, having a periodic structure. The first electrode layer is superior to the second electrode layer in ohmic contact with respect to the semiconductor layer, and the second electrode layer contains a metal exhibiting a higher plasma frequency than the first electrode layer.

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Kock, A., et al. “Strongly directional emission from AIGaAs/GaAs light-emitting diodes,” Appl. Phys. Lett. 57 (22), Nov. 26, 1990, American Institute of Physics. pp. 2327-2329.
Vuckovi, Jelena., et al. “Surface Plasmon Enhanced Light-Emitting Diode.” IEEE Journal of Quantum Electronics, vol. 36, No. 10, Oct. 2000, pp. 1131-1144.
Gontijo, I., et al. “Coupling of InGaN quantum-well photoluminescence to silver surface plasmons,” Physical Review B, vol. 60, No. 16, Oct. 15, 1999, pp. 11 564-11 567.

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