Electricity: conductors and insulators – Feedthrough or bushing – Compression
Patent
1987-07-24
1988-11-29
LaRoche, Eugene R.
Electricity: conductors and insulators
Feedthrough or bushing
Compression
357 70, 357 74, 174 52PE, H01L 2328, H01L 2302, H01L 2312, H02G 1308
Patent
active
047885831
ABSTRACT:
A semiconductor device has such a construction that free tip ends of stage bars extending from a stage do not extend to side surfaces of a resin package, and the resin package is constituted by an inner resin package portion and an outer resin package portion. The free tip ends of the stage bars are located inside the outer resin package portion and are completely sealed. A method of producing the semiconductor device includes steps of providing wires for electrically connecting terminals of a semiconductor element which is mounted on the stage with corresponding leads and forming the inner resin package portion over the semiconductor element and its vicinity including portions of the leads and stage bars which are connected to the stage. Then the free tip ends of the stage bars are cut and the outer resin package portion is formed over the inner resin package portion and the remaining portion of the semiconductor device, so that the cut free tip ends of the stage bars are completely sealed inside the outer resin package portion.
REFERENCES:
patent: 3778685 (1973-12-01), Kennedy
patent: 3902148 (1975-08-01), Drees et al.
patent: 4250347 (1981-02-01), Fierkens
Patent Abstracts of Japan, vol. 9, No. 173, Jul. 18, 1985 & JP-A-60 46 058.
Patent Abstracts of Japan, vol. 10, No. 32, Feb. 7, 1986 & JP-A-60 189 940.
Patent Abstracts of Japan, vol. 6, No. 264, Dec. 23, 1982 & JP-A-57 159 032.
Patent Abstracts of Japan, vol. 6, No. 185, Sept. 21, 1982 & JP-A-57 100 752.
Hayashi Hiroaki
Kawahara Toshimi
Sono Michio
Fujitsu Limited
Fujitsu VLSI Limited
LaRoche Eugene R.
Shingleton Michael B.
LandOfFree
Semiconductor device and method of producing semiconductor devic does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of producing semiconductor devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of producing semiconductor devic will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-366840