Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2006-10-03
2006-10-03
Thomas, Eric W. (Department: 2831)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S311000
Reexamination Certificate
active
07116544
ABSTRACT:
A capacitor structure is provided that includes a substrate, a first group of conducting strip, a second group of conducting strips, a third group of conducting strips, and a fourth group of conducting strips. The capacitor structure can further include a first set of vertical vias, a second set of vertical vias, a third sect of vertical vias and a fourth set of vertical vias.
REFERENCES:
patent: 3034445 (1962-05-01), Pelladeau
patent: 3255324 (1966-06-01), Ovshinsky
patent: 3460010 (1969-08-01), Domenico et al.
patent: 4017820 (1977-04-01), Ross
patent: 4409608 (1983-10-01), Yoder
patent: 4419713 (1983-12-01), Levinson
patent: 4423371 (1983-12-01), Senturia et al.
patent: 4481487 (1984-11-01), Brelm et al.
patent: 4890192 (1989-12-01), Smith
patent: 4929998 (1990-05-01), Boudewijns
patent: 4937649 (1990-06-01), Shiba
patent: 4949217 (1990-08-01), Ngo
patent: 4972252 (1990-11-01), Maekawa
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5172299 (1992-12-01), Yamada et al.
patent: 5208725 (1993-05-01), Akcasu
patent: 5245505 (1993-09-01), Shiga et al.
patent: 5583359 (1996-12-01), Ng et al.
patent: 5903493 (1999-05-01), Lee
patent: 6001702 (1999-12-01), Cook et al.
patent: 6124624 (2000-09-01), Van Roosmalen et al.
patent: 6150707 (2000-11-01), Cook et al.
patent: 6266226 (2001-07-01), Hayashi
patent: 6266227 (2001-07-01), Konushi et al.
patent: 6312963 (2001-11-01), Chou et al.
patent: 6414806 (2002-07-01), Gowda et al.
patent: 6445056 (2002-09-01), Nakashima
patent: 6459561 (2002-10-01), Galvagni et al.
patent: 6501610 (2002-12-01), Sugawara et al.
patent: 6570210 (2003-05-01), Sowlati et al.
patent: 6597562 (2003-07-01), Hu et al.
patent: 6635916 (2003-10-01), Aton
patent: 6815739 (2004-11-01), Huff et al.
patent: 76 35 588 (1978-02-01), None
patent: 41 13 576 (1991-10-01), None
patent: 995334 (1965-06-01), None
patent: 1 247 985 (1971-09-01), None
patent: 2 060 253 (1981-04-01), None
patent: 42-5946 (1942-03-01), None
patent: 52-122674 (1951-03-01), None
patent: 52-122675 (1951-03-01), None
patent: 56-16936 (1954-07-01), None
patent: 56-96620 (1954-12-01), None
patent: 57-157128 (1956-03-01), None
patent: 57-157129 (1956-03-01), None
patent: 57-215803 (1962-01-01), None
patent: 46-24658 (1971-07-01), None
patent: 46-43172 (1971-12-01), None
patent: 50-42369 (1975-04-01), None
patent: 53-61051 (1978-06-01), None
patent: 54-101153 (1979-08-01), None
patent: 57-52120 (1982-03-01), None
patent: 52-051552 (1983-03-01), None
patent: 58-051552 (1983-03-01), None
patent: 58-56432 (1983-04-01), None
patent: 58-66632 (1983-05-01), None
patent: 58-097854 (1983-06-01), None
patent: 58-159367 (1983-09-01), None
patent: 59-91718 (1984-06-01), None
patent: 59-105341 (1984-06-01), None
patent: 59-105341 (1984-06-01), None
patent: 59-132613 (1984-07-01), None
patent: 59-197122 (1984-11-01), None
patent: 59-222959 (1984-12-01), None
patent: 222959 (1984-12-01), None
patent: 60-1825 (1985-01-01), None
patent: 60-4207 (1985-01-01), None
patent: 60-92604 (1985-05-01), None
patent: 60-102725 (1985-06-01), None
patent: 60-102726 (1985-06-01), None
patent: 60-102727 (1985-06-01), None
patent: 61-55936 (1986-03-01), None
patent: 61-57513 (1986-04-01), None
patent: 61-259560 (1986-11-01), None
patent: 61-263251 (1986-11-01), None
patent: 64-084616 (1989-03-01), None
patent: 01-096943 (1989-04-01), None
patent: 01-120858 (1989-05-01), None
patent: 01-133354 (1989-05-01), None
patent: 2-47024 (1990-03-01), None
patent: 02-086160 (1990-03-01), None
patent: 02-090561 (1990-03-01), None
patent: 03-257855 (1990-03-01), None
patent: 02-178963 (1990-07-01), None
patent: 02-191369 (1990-07-01), None
patent: 03-096267 (1991-04-01), None
patent: 03-133169 (1991-06-01), None
patent: 3-79416 (1991-08-01), None
patent: 03-181165 (1991-08-01), None
“Switched Capacitor-Filler Dynamic Tuning Mechanism”, Feb. 1987, No. 274, Kenneth Mason Publications, Ltd., London, England.
(Non-English Translation), Toshio Sudo, “Interconnect Capacitances And Crosstalk Noices on GoAs LSI's”, R&D Center, Toshiba Corp.
Alley, G., “Interdigital Capacitors and Their Application to Lumped-Element Microwave Integrated Circuits,” Dec. 1970, IEEE Trans. Microwave Theory Tech., vol. MTT-18, No. 12.
Aparicio, R., and Hajimiri A., “Capacity Limits and Matching Properties of Lateral Flux Integrated Capacitors,” 2001, Pasadena, California, Department of Electrical Engineering, California Institute of Technology.
Chan, C., “Analysis of MMIC Structures Using an Efficient Iterative Approach,” Jan. 1983, IEEE Trans. Microwave Theory Tech., vol. 36, No. 1 (illegible document).
Cohen, S., “A Novel Metal-Insulator-Metal Structure for Field-Programmable Devices,” Jul. 1998, IEEE Trans. Electron Devices, vol. 40, No. 7.
“Gallium Arsenide,” Jan. 1988, Colloquium Digest No: 1988/17.
“Technology Growth For The 80's,” May 1980, IEEE Catalog No. 80CH1545-3 MTT.
Delrue, R. et al., “The Effects of a Dielectric Capacitor Layer and Metallization on the Propagation Parameters of Coplanar Waveguide for MMIC,” Aug. 1988, IEEE Trans. Microwave Theory Tech., vol. 36, No. 8.
Benecke W., Petzold, H.-C., “Micro Electro Mechanical Systems,” Feb. 1992, IEEE Catalog No. 92CH3093-2.
Esfandiari, R. et al., “Design of Interdigitated Capacitors and their Application to Gallium Arsenide Monolithic Filters,” Jan. 1983, IEEE Trans. Microwave Theory Tech., vol. 31, No. 1.
“Gallium Arsenide Processing Techniques,” 1984.
“Microwave Theory and Techniques,” Apr. 1978, IEEE Trans. Microwave Theory Tech., vol. MTT-26, No. 4.
Benedek, P., “Capacitances of a planar multiconductor configuration on a dielectric substrate by a mixed order finite-element method,” May 1976, IEEE Trans. Circuits and Systems, vol. 23, No. 5, pp. 279-284.
“Monolithic Circuits Symposium,” Jun. 1991, IEEE Catalog No. 91CH3016-3.
Kollipara, R. et al.,Modeling and Design of Interdigital Structure, Nov. 1991, IEEE Trans. Electron Devices, vol. 38, No. 11.
Lin, J.,Two dimensional and three-dimensional interdigital capacitors as basic elements for chemical sensors, 1991, Sensors and Actuators B, 5, pp. 223-226.
Naghed, M. et al.,Equivalent Capacitances of Coplanar Waveguide Discontinuities and Interdigitated Capacitors Using a Three-Dimensional Finite Difference Method, Dec. 1990, IEEE Trans. Microwave Theory Tech., vol. 38, No. 12.
Sato, S., et al., “An SI0ΓTa205Thin Film Capacitor,” Sep. 1973, IEEE Trans. Parts, Hybrids, Packaging, vol. PHP-9, No. 3.
“Conference Proceedings of the 14thEuropean Microwave Conference,” Sep. 1984, SITEL—The Société Belge Des Ingénieurs De Télécommunications Et D' Electronique, pp. 853-858.
Ch'en, D. et al., “Devices&Monolithic Circuit Elements” 1984, IEEE MTT-S Digest.
Slater, D., “Low-Voltage Coefficient Capacitors for VLSI Processes,” Feb. 1989, IEEE Journal of Solid-State Circuits, vol. 24, No. 1.
Tanaka, H.,The Effect of Surface Roughness of Si3N4Films on TDDB Characteristics of Ono Films, 1992, IEEE/IRPS, pp. 31-36.
“Micro Electro Mechanical Systems,” Feb. 1989, IEEE Catalog No. 89THO249-3.
Van Den Berg, P., et al.,The Electric-Field Problem of an Interdigital Transducer in a Multilayered Structure, Feb. 1985, IEEE Trans. Microwave Theory Tech., vol. MTT-33, No. 2.
Veloric, H., et al.,Capacitors for Microwave Applications, Jun. 1976, IEEE Trans. Parts, Hybrids, Packaging, vol. PHP-12, No. 2.
Wakayama, M., et al., “A 30-MH2Low-Jitter High-Linearity CMOS Voltage-Controlled Oscillator,” Dec. 1987, IEEE Journal of Solid-State Circuits, vol. SC-22, No. 6.
Thomas & Delphion, “Electrostatic Device”, Sep. 1963, IBM Technical Disclosure Bulletin.
S.T. Nguyen and T. Proch, “Vertical Capacitor VLSI Structure For High Voltage Applications”, Dec. 1989, vol. 32, No. 7 IBM Technical Disclosure Bulletin.
P. Benedek and P. Silvest
Marvell International Ltd.
Thomas Eric W.
LandOfFree
Capacitor structure in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor structure in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor structure in a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3668233