Semiconductor integrated circuit having reduced current leakage

Details Semiconductor integrated circuit having reduced current leakage Semiconductor integrated circuit having reduced current leakage

1996-05-22

2000-03-07

Wells, Kenneth B.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327377, G05F 110

Patent

active

060345632

ABSTRACT:
A semiconductor integrated circuit including a first MOS transistor supplied with a first power supply voltage and having a high threshold voltage; a second MOS transistor supplied with a second power supply voltage and having the high threshold voltage; a logic circuit connected between the first transistor and the second transistor and including a plurality of MOS transistors having a low threshold voltage; a control circuit for generating a control signal when the logic circuit is in a standby state; and a voltage generating circuit for generating a first voltage which is a higher than the first power supply voltage and a second voltage which is a lower than the second power supply voltage, for supplying the first voltage to a gate of the first MOS transistor and for supplying the second voltage to a gate of the second MOS transistor when the logic circuit is in the standby state, thereby to decrease leakage current through the first and second transistors and through the logic circuit when in the standby state.

REFERENCES:
patent: 4904885 (1990-02-01), Yamada et al.
patent: 5041739 (1991-08-01), Goto
patent: 5128560 (1992-07-01), Chern et al.
patent: 5159214 (1992-10-01), Okumura
patent: 5321324 (1994-06-01), Hardee et al.
patent: 5461338 (1995-10-01), Hirayama et al.
patent: 5528173 (1996-06-01), Merritt et al.
MTC MOS Logic Circuit Technology, "Intention of Decreasing the Electric Power Consumption for LSI--1 V. Small Power Consumption High-speed Operation", Densi-Gijutsu (Electronics Technology) 1994-9, pp. 29-32.

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