Semiconductor superlattice

Details Semiconductor superlattice Semiconductor superlattice

1986-09-15

1988-11-29

Edlow, Martin H.

357 16, 357 30, H01L 2712, H01L 29161, H01L 2714

Patent

active

047885793

ABSTRACT:
A semiconductor device comprises two layers of semiconductor material each of different conductivity type, with a region of semiconductor material sandwiched between the layers. The material of which the region is formed is of the same composition as the first layer at the edge of the region adjacent to the first layer, and varies in composition linearly on the running average in the direction between the layers such that the region forms a heterojunction with the second layer.

REFERENCES:
patent: 3626328 (1971-12-01), Esaki
patent: 4353081 (1982-10-01), Allyn et al.
patent: 4383269 (1983-05-01), Capasso
patent: 4439782 (1984-03-01), Holonyak, Jr.
patent: 4450463 (1984-05-01), Chin
patent: 4476477 (1984-10-01), Capasso et al.
patent: 4590507 (1986-05-01), Capasso et al.
patent: 4607272 (1986-08-01), Osbourn
patent: 4620206 (1986-10-01), Ohta et al.
patent: 4679061 (1987-07-01), Capasso et al.

Affiliated with

Also associated with

Rating

Semiconductor superlattice does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor superlattice, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor superlattice will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-366697