Method for preparing single crystal

Details Method for preparing single crystal Method for preparing single crystal

2006-02-14

2006-02-14

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S014000, C117S015000

Reexamination Certificate

active

06997986

ABSTRACT:
A method for preparing a high-quality garnet single crystal represented by the composition formula CaxNbyGazO12(2.9<x<3.1, 1.6<y<1.8, 3.1<z<3.3) is provided. The single crystal can preferably be used as a single crystal substrate for forming a defect-free single crystal of bismuth-substituted rare-earth iron garnet thereon by liquid-phase epitaxial deposition. The method is to prepare a single crystal by the Czochralski technique, the single crystal having a garnet structure being represented by the composition formula CaxNbyGazO12(2.9<x<3.1, 1.6<y<1.8, 3.1<z<3.3). The crystal is grown at a crystal growth rate g less than or equal to 1.72 mm/h. The crystal is preferably grown in an atmosphere containing oxygen 0.4% or more by volume and below 10.0% by volume.

REFERENCES:
patent: 10-139596 (1998-05-01), None
patent: WO 03/000963 (2003-01-01), None

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