Interconnect structure for use in an integrated circuit

Details Interconnect structure for use in an integrated circuit Interconnect structure for use in an integrated circuit

2006-06-13

2006-06-13

Owens, Douglas W (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000

Reexamination Certificate

active

07061111

ABSTRACT:
A copper interconnect structure is disclosed as comprising a copper layer and an aluminum nitride layer formed over the copper layer. The aluminum nitride layer passivates the copper layer surface and enhances the thermal conductivity of a semiconductor substrate by radiating heat from the substrate as well as from the copper layer.

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