Stock material or miscellaneous articles – Structurally defined web or sheet – Including components having same physical characteristic in...
Reexamination Certificate
2006-12-05
2006-12-05
Turner, Archene (Department: 1775)
Stock material or miscellaneous articles
Structurally defined web or sheet
Including components having same physical characteristic in...
C428S216000, C428S446000, C428S698000, C428S704000
Reexamination Certificate
active
07144620
ABSTRACT:
Chemical vapor deposition processes result in films having low dielectric constants when suitable chemical precursors are utilized. Preferred chemical precursors include siloxanes, (fluoroalkyl)fluorosiloxanes, (fluoroalkyl)silanes, (alkyl)fluorosilanes, (fluoroalkyl)fluorosilanes, alkylsiloxysilanes, alkoxysilanes, alkylalkoxysilanes, silylmethanes, alkoxysilylmethanes, alkylalkoxysilylmethanes, alkoxymethanes, alkylalkoxymethanes, and mixtures thereof. The precursors are particularly suited to thermal CVD for producing low dielectric constant films at relatively low temperatures, particularly without the use of additional oxidizing agents. Such films are useful in the microelectronics industry.
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ASM Japan K.K.
Knobbe Martens Olson & Bear LLP
Turner Archene
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