Semiconductor device

Details Semiconductor device Semiconductor device

2006-10-03

2006-10-03

Nguyen, Patricia (Department: 2817)

Amplifiers

With semiconductor amplifying device

Integrated circuits

C330S126000, C330S310000

Reexamination Certificate

active

07116175

ABSTRACT:
Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.

REFERENCES:
patent: 6297694 (2001-10-01), Yamamoto
patent: 6329879 (2001-12-01), Maruyama et al.
patent: 6330165 (2001-12-01), Kohjiro et al.
patent: 6483398 (2002-11-01), Nagamori et al.
patent: 6489680 (2002-12-01), Kohjiro et al.
patent: 6605842 (2003-08-01), Hoshino et al.
patent: 6765268 (2004-07-01), Akamine et al.
patent: 2000-332551 (1999-05-01), None
patent: 2001-141756 (1999-11-01), None
patent: 2001-345400 (2000-06-01), None

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