Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2006-02-14
2006-02-14
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S206000, C257S203000
Reexamination Certificate
active
06998655
ABSTRACT:
A semiconductor integrated circuit is capable of filling the need for more memory space through the effective use of an already-designed core block. A block (1) including a CPU, an array (4a) of a plurality of bonding pads, and RAMs (21a, 22a) which are first memories located on the same side of the array (4a) as the block (1) are already designed. The requirement for increased memory capacity can be filled with ease by the addition of RAMs (24a, 25a) which are second memories located on the opposite side of the array (4a) from the block (1). Since the second memories are different in physical configuration from the first memories, it is easy to design a physical configuration to achieve required memory capacity outside a core block (8a) within a single-chip microcomputer (9c).
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Sakakibara Kazuo
Watanabe Katsuyoshi
Flynn Nathan J.
Mitsubishi Electric System LSI Design Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
Sefer Ahmed N.
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