Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-02-28
2006-02-28
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Reexamination Certificate
active
07005381
ABSTRACT:
The present invention is a method for reducing nanoscale surface roughness. The method involves exposing the surface to an environment that preferentially promotes evaporation of material from the region of nanoscale roughness. The methods involve either heating the surface, or flushing an inert gas across the surface, or a combination of both.
REFERENCES:
patent: 6204151 (2001-03-01), Malik et al.
patent: 6417060 (2002-07-01), Tavkhelidze et al.
patent: 2003/0035261 (2003-02-01), Bensaoula et al.
Blum David S.
Borealis Technical Limited
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