Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-02-06
2000-03-07
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257752, H01L 2352
Patent
active
060344342
ABSTRACT:
A method of forming sharp oxide peaks on the surface of a semiconductor wafer for the purpose of conditioning polishing pads used during a Chemical Mechanical Polishing process is disclosed. In order to create oxide peaks on the surface of a wafer, additional elements are added to a trace layer of the wafer. An oxide layer is deposited over the additional elements using an Electron Cyclotron Resonance Chemical Vapor Deposition process, which includes a sputtering step, in order to create sharp peaks in the oxide layer over the additional lines. In some embodiments, the additional elements may be formed from a multiplicity of rectangular blocks over which pyramid-like oxide peaks are created. In others, they may be formed from a multiplicity of rectangular blocks connected by narrow lines over which pyramid-like oxide peaks and knife-edged peaks, respectively, are created.
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Bothra Subhas
Weling Milind G.
Munson Gene M.
VLSI Technology Inc.
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