Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-06-20
2006-06-20
Rodriguez, Armando (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S046013, C438S038000
Reexamination Certificate
active
07065117
ABSTRACT:
A semiconductor laser element includes: a stack of layers having resonator facets; and at least one protection layer formed on at least one of the resonator facets. Each of the at least one protection layer includes at least first, second, and third sublayers. The first sublayer is formed nearest to the stack among the at least first, second, and third sublayers, and made of a material not containing oxygen (or nitrogen) as a constituent element. The second sublayer is made of an oxide (or nitride) produced by oxidizing (or nitriding) a portion of the first sublayer. The third sublayer is formed farthest from the stack among the at least first, second, and third sublayers, and made of an oxide (or nitride). The thickness d2of the second sublayer and the total thickness d1of the first and second sublayers satisfy a relationship, 0.1≦d2/d1≦0.9.
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Fuji Photo Film Co. , Ltd.
Rodriguez Armando
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