Method of fabricating an integral capacitor and gate...

Details Method of fabricating an integral capacitor and gate... Method of fabricating an integral capacitor and gate...

2006-12-12

2006-12-12

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S250000, C438S253000, C438S381000, C438S396000

Reexamination Certificate

active

07148146

ABSTRACT:
A system, apparatus and/or method is provided for fabricating an integrated capacitor during the fabrication of a transistor employing chemical mechanical polishing of a gate electrode of the transistor. Components of the integrated capacitor, particularly the lower electrode of a parallel plate capacitor in one form thereof, and an outer plate of a cylindrical-like capacitor in another form thereof, are defined by the polish stop layer during chemical mechanical polishing (CMP) of a gate of the transistor. According to an aspect of the subject invention, the polish stop layer may be an oxide or a nitride.

REFERENCES:
patent: 6699766 (2004-03-01), Taravade et al.

Affiliated with

Also associated with

Rating

Method of fabricating an integral capacitor and gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating an integral capacitor and gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an integral capacitor and gate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3658569