Photon source and a method of fabricating a photon source

Details Photon source and a method of fabricating a photon source Photon source and a method of fabricating a photon source

2006-08-08

2006-08-08

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000, C257S012000, C257S009000, C257SE29071

Reexamination Certificate

active

07087923

ABSTRACT:
A photon source comprising a quantum dot layer having a plurality of quantum dots with an n-modal distribution in emission wavelength, said n-modal distribution in emission wavelength comprising n peaks in a plot of dot density as a function of emission wavelength where n is an integer of at least 2, the photon source further comprising isolating means for isolating the emission from a predetermined number of quantum dots.

REFERENCES:
patent: 2002/0196827 (2002-12-01), Shields et al.
patent: 2003/0127608 (2003-07-01), Shields et al.
patent: 2 367 690 (2002-04-01), None
patent: 2 380 605 (2003-04-01), None
patent: WO 01/93384 (2001-12-01), None
S. Anders., et al., “Bimodal Size Distribution of Self-Assembled InxGa1-xAs Quantum Dots”, Physical Review B 66, 125309, 2002, pp. 125309-1-125309-5.

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