Semiconductor device with superimposed poly-silicon plugs

Details Semiconductor device with superimposed poly-silicon plugs Semiconductor device with superimposed poly-silicon plugs

2006-12-19

2006-12-19

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S520000, C257S756000, C257S758000, C257SE21649

Reexamination Certificate

active

07151314

ABSTRACT:
A semiconductor device includes a first insulating layer; a first poly-silicon plug formed in the first insulating layer; a second insulating layer, formed on the first insulating layer; and a second poly-silicon plug that is formed in the second insulating layer. At least one of the first and second insulating layers is made from non-doped silicate glass. The first and second poly-silicon plugs are electrically coupled to each other in a thickness direction. Preferably, both the first and second insulating layers are made from non-doped silicate glass.

REFERENCES:
patent: 6188116 (2001-02-01), Lin
patent: 6680254 (2004-01-01), Sun et al.
patent: 6727144 (2004-04-01), Hashimoto
patent: 6818935 (2004-11-01), Kweon et al.
patent: 2005/0009321 (2005-01-01), Ryu

Affiliated with

Also associated with

Rating

Semiconductor device with superimposed poly-silicon plugs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with superimposed poly-silicon plugs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with superimposed poly-silicon plugs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3657887