Nitride semiconductor thin film and method for growing the same

Details Nitride semiconductor thin film and method for growing the same Nitride semiconductor thin film and method for growing the same

2006-10-17

2006-10-17

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S103000

Reexamination Certificate

active

07122847

ABSTRACT:
The present invention relates to a nitride semiconductor thin film and a method for growing the same. The present invention has an advantage in that a plurality of grooves are formed on a substrate by partially etching the substrate, and leg portions for preventing longitudinal growth of a nitride semiconductor are formed within the grooves so that the nitride semiconductor thin film is grown laterally to cover top portions of the leg portions, thereby ensuring growth of a high quality nitride semiconductor thin film.

REFERENCES:
patent: 2004/0113166 (2004-06-01), Tadatomo et al.

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