Nitride semiconductor light emitting device and...

Details Nitride semiconductor light emitting device and... Nitride semiconductor light emitting device and...

2006-06-20

2006-06-20

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S042000, C438S046000, C438S047000

Reexamination Certificate

active

07063995

ABSTRACT:
The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.

REFERENCES:
patent: 5854088 (1998-12-01), Plais et al.
patent: 5905275 (1999-05-01), Nunoue et al.
patent: 6178190 (2001-01-01), Naniwae et al.
patent: 6239033 (2001-05-01), Kawai
patent: 6606333 (2003-08-01), Kadota
patent: 6611002 (2003-08-01), Weeks et al.
patent: 2001-007395 (2001-01-01), None
patent: 2001-111106 (2001-04-01), None
patent: 2003-332618 (2003-11-01), None
Patent Abstracts of Japan of Publication No. 2001007395A published on Jan. 12, 2001.

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