Method and structure for a self-aligned silicided word line...

Details Method and structure for a self-aligned silicided word line... Method and structure for a self-aligned silicided word line...

2006-10-10

2006-10-10

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S649000, C438S706000

Reexamination Certificate

active

07119024

ABSTRACT:
A method used to form a semiconductor device provides a silicide layer on a plurality of transistor word lines and on a plurality of conductive plugs. In one embodiment, the word lines, one or more sacrificial dielectric layers on the word lines, conductive plugs, and a conductive enhancement layer are formed through the use of a single mask. An in-process semiconductor device which can be formed using one embodiment of the inventive method is also described.

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