Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-08-29
2006-08-29
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S713000, C438S718000, C438S719000, C252S079100, C216S002000, C216S041000, C216S058000, C216S074000, C216S079000, C216S080000
Reexamination Certificate
active
07098137
ABSTRACT:
A method of making a micro corner cube array includes the steps of: providing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and dry-etching the surface of the substrate anisotropically with an etching gas that is reactive with the substrate, thereby forming a plurality of unit elements of the micro corner cube array on the surface of the substrate. Each of the unit elements is made up of a number of crystal planes that have been etched at a lower etch rate than the {111} planes of the crystals.
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Ihara Ichiro
Minoura Kiyoshi
Sawayama Yutaka
Nixon & Vanderhye P.C.
Norton Nadine G.
Sharp Kabushiki Kaisha
Umez-Eronini Lynette T.
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