Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-02-28
2006-02-28
Guerrero, Maria F. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S678000, C257S738000, C257S778000, C257S780000
Reexamination Certificate
active
07005743
ABSTRACT:
A semiconductor device able to maintain a bonding state between a bump and an electrode and having high reliability even under thermal stress, wherein a sealing resin is interposed to bond the electrodes and bumps between a wiring board formed with a plurality of electrodes and an IC chip formed with a plurality of bumps, the bumps being formed under the condition that the following formula is satisfied.in-line-formulae description="In-line Formulae" end="lead"?100<((ΦA×F)/H)<125in-line-formulae description="In-line Formulae" end="tail"?where ΦA represents the top diameter of a bump bonded with an electrode, H the height of a bump projecting from the IC chip and bonded with an electrode, and F the linear thermal expansion coefficient of the sealing resin.
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Honda Noriyuki
Iwatsu Satoshi
Depke Robert J.
Guerrero Maria F.
Sony Corporation
Trexler, Bushnell Giangiorgi, Blackstone & Marr, Ltd.
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