Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Reexamination Certificate
2006-12-12
2006-12-12
Allen, Stephone B. (Department: 2878)
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
C257S432000
Reexamination Certificate
active
07148465
ABSTRACT:
A photodetector comprises a semiconductor substrate with entrance and reflecting faces formed at the substrate upper surface. The reflecting face forms an acute angle with the substrate surface and is positioned so that an optical beam transmitted through the entrance face into the substrate is internally reflected from the reflecting face toward the substrate upper surface. A photodetector active region is formed on the substrate upper surface and is positioned so that the reflected optical beam impinges on the active region. The photodetector may be mounted on a second substrate for receiving an optical beam from a planar waveguide formed on the second substrate or an optical fiber mounted in a groove on the second substrate.
REFERENCES:
patent: 5218223 (1993-06-01), Spaeth et al.
patent: 5344746 (1994-09-01), Vettiger et al.
patent: 5793062 (1998-08-01), Kish et al.
patent: 5932114 (1999-08-01), Makiuchi
patent: 5999670 (1999-12-01), Yoshimura et al.
patent: 6108472 (2000-08-01), Rickman et al.
patent: 6229160 (2001-05-01), Krames et al.
patent: 6246097 (2001-06-01), Kato et al.
patent: 6323063 (2001-11-01), Krames et al.
patent: 6339607 (2002-01-01), Jiang et al.
patent: 6353250 (2002-03-01), Fukano
patent: 6570190 (2003-05-01), Krames et al.
patent: 6617568 (2003-09-01), Matsuda
patent: 6753587 (2004-06-01), Furuya et al.
patent: 6768136 (2004-07-01), Eisert et al.
patent: 6885795 (2005-04-01), Hsu et al.
patent: 6921956 (2005-07-01), Yang et al.
patent: 6992276 (2006-01-01), Blauvelt et al.
patent: 2002/0122615 (2002-09-01), Painter et al.
patent: 2002/0172459 (2002-11-01), Baily et al.
patent: 0807981 (1997-11-01), None
patent: 06029566 (1994-02-01), None
Bazylenko et al, Fabrication of Light-Turning Mirrors in Buried-Channel silica Waveguides for Monolithic and Hybrid Integration, Journal of Lightwave Technology, Jan. 1997, pp. 148-153, vol. 15, No. 1.
Bouadma et al, 1.3-um GaInAsP/InP Buried-Ridge-Structure Laser and its Monolithic Integration with Photodetector Using RI Beam Etching, Journal of Lightwave Technology, May 1994, pp. 742-748, vol. 12, No. 5.
Chao et al, Fresnel Analysis of Effective Mirror Reflectivity in Folded-Cavity In-Plane Surface-Emitting Lasers, IEEE Photonics Technology Letters, Apr. 1993, pp. 390-392, vol. 4, No. 4.
Fukano et al, A Low-Cost Edge-Illuminated Refracting-Facet Photodiode Module with Large Bandwidth and High Responsivity, Journal of Lightwave Technology, Jan. 2000, pp. 79-83, vol. 18, No. 1.
Fukano et al, High-Responsivity and Low-Operation-Voltage Edge-Illuminated Refracting-Facet Photodiodes with Large Alignment Tolerance, Journal of Lightwave Technology, May 1997, pp. 894-899, vol. 15, No. 5.
Fukano et al, Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage, Electronics Letters, Dec. 5, 1996, pp. 2346-2348, vol. 32, No. 25.
Gfeller et al, 50 mW CW-Operated Single-Mode Surface-Emitting AIGaAs Lasers with 45 deg Total Reflection Mirrors, IEEE Photonics Technology Letters, Jul. 1992, pp. 698-700, vol. 4, No. 7.
Hilleringmann et al, Optoelectronic System Integration on Silicon:Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip, IEEE Transactions on Electron Devices, May 1995, pp. 841-846, vol. 42, No. 5.
Jones et al, Hybrid integration onto silicon motherboards with planar silica waveguides, IEE Proc. Optoelectron., Oct. 1996, pp. 316-321, vol. 143, No. 5.
Kato et al, Large Coupling Tolerance Side-Illuminated Mirror Photodiode for Low-Cost Surface Hybrid Integration, IEEE Photonics Technology Letters, Jun. 1999, pp. 709-711, vol. 11, No. 6.
Strandman et al, Fabrication of 45 deg Mirrors Together with Well-Defined V-Grooved Using Wet Anisotropic Etching of Silicon, Journal of Microelectromechanical Systems, Dec. 1995, pp. 213-219, vol. 4, No. 4.
Terui et al, Novel Micromirror for Vertical Optical Path Conversion Formed in Silica-Based PLC Using Wettability Control of Resin, Journal of Lightwave Technology, Sep. 1998, pp. 1631-1639, vol. 16, No. 9.
Zurhelle et al, Highly Efficient Waveguide-Detector Coupling Structures for Integrated Opto-Electronical Circuits on Silicon, Journal of Lightwave Technology, Mar. 1996, pp. 410-416, vol. 14, No. 3.
European Search Report dated Apr. 5, 2006 for Application No. EP 03 75 2217 (2 pages).
Blauvelt Henry A.
Lee Hao
Vernooy David W.
Alavi David S.
Allen Stephone B.
Christie Parker & Hale LLP
Ellis Suezu
Xponent Photonics Inc
LandOfFree
Semiconductor photodetector with internal reflector does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor photodetector with internal reflector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor photodetector with internal reflector will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3653078