Field-effect transistor

Details Field-effect transistor Field-effect transistor

2006-11-07

2006-11-07

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

28, C438S570000

Reexamination Certificate

active

07132703

ABSTRACT:
A field-effect transistor includes: a carrier supply layer supplying carriers; a Schottky contact layer forming a Schottky barrier; and an intermediate layer formed between the carrier supply layer and the Schottky contact layer. Here, the intermediate layer has an electron affinity which is higher than an electron affinity of the carrier supply layer but lower than an electron affinity of the Schottky contact layer.

REFERENCES:
patent: 6064082 (2000-05-01), Kawai et al.
patent: 2003/0218183 (2003-11-01), Micovic et al.
Nienhaus, H. et al., “Ionization Energy and Electron Affinity of Clean and Oxidized AlxGa1-xN (0001) Surfaces”, Mat. Res. Soc. Symp. Proc. 680 (2001) E4.5, p. 1; http://fkpme246a.uni-duisburg.de/ag—lorke/publications
ienhaus/article-Nienhaus-id134.pdf.

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