Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly
Reexamination Certificate
2006-08-29
2006-08-29
Guharay, Karabi (Department: 2879)
Electric lamp or space discharge component or device manufacturi
Process
With assembly or disassembly
C445S051000, C313S495000
Reexamination Certificate
active
07097526
ABSTRACT:
Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.
REFERENCES:
patent: 4084986 (1978-04-01), Aoki et al.
patent: 4940916 (1990-07-01), Borel et al.
patent: 5585301 (1996-12-01), Lee et al.
patent: 5714415 (1998-02-01), Oguro
patent: 5789851 (1998-08-01), Turlot et al.
patent: 5866930 (1999-02-01), Saida et al.
patent: 5902650 (1999-05-01), Feng et al.
patent: 6015323 (2000-01-01), Moradi et al.
patent: 6019657 (2000-02-01), Chakvorty et al.
patent: 6031250 (2000-02-01), Brandes et al.
patent: 6064149 (2000-05-01), Raina
patent: 6181308 (2001-01-01), Cathey et al.
patent: 6190929 (2001-02-01), Wang et al.
patent: 6211608 (2001-04-01), Raina et al.
patent: 6635983 (2003-10-01), Raina et al.
patent: 6650043 (2003-11-01), Derraa
patent: 04168763 (1992-06-01), None
Young-Chang Joo, et al. 1996. Electromigration in single-crystal aluminum lines pre-damaged by nanoindentation,Materials Research Society Symp. Proc., 428:225-230.
Atsushi Masuda, et al. May 15, 1997. Nitrogen-doping effects on electrical, optical, and structural properties in hydrogenated amorphous silicon. American Institute of Physics.J. Appl. Phys., 81(10):6729-6737.
C-K. Hu, et al. 1993. Electromigration damage in fine A1 alloy lines due to interfacial diffusion.Materials Research Society Symp. Proc., 309:111-120.
Moradi Benham
Raina Kanwal K.
Guharay Karabi
Micro)n Technology, Inc.
Roy Sikha
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