Structure of switching device for liquid crystal display...

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

Reexamination Certificate

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C349S042000, C345S092000, C257S059000, C257S072000

Reexamination Certificate

active

07133089

ABSTRACT:
A thin film transistor of an LCD device and a fabrication method thereof fabricates the thin film transistor of the LCD device including a source electrode unit of ‘U’ shape and a drain electrode of straight line shape formed as entering into a concave portion of the source electrode and a channel layer formed between the source electrode and a longer side of the drain electrode in fabricating the thin film transistor using a slit mask, and thereby, the LCD having even device property can be fabricated and inferiority such as short-circuit of the channel can be solved.

REFERENCES:
patent: 5032883 (1991-07-01), Wakai et al.
patent: 6215541 (2001-04-01), Song et al.
patent: 6255130 (2001-07-01), Kim
patent: 6664569 (2003-12-01), Moon
C. W. Kim et al.; A Novel Four-Mask-Count Process Architecture for TFT-LCDs; SID 00 Digest; Digest of Technical Papers; pp. 1006-1009.

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