Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-08-22
2006-08-22
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S057000, C349S039000, C349S043000, C349S139000, C349S042000
Reexamination Certificate
active
07095048
ABSTRACT:
Dummy holes36are made for every one of display dot5a, 5band5cat pixels5through interlayer film33up to gate electrode and scanning lines11before interlayer film33on glass substrate3is washed. When interlayer film33is washed, electric charges stored at semiconductor layer21are substantially the same in quantity as those stored at gate electrode and scanning lines11through dummy holes36. Thus, electric potentials at gate electrode and scanning lines11are substantially equal in magnitude to those at semiconductor layer21. This can suppress the occurrence of voltage differences imposed between gate electrode and scanning lines11and semiconductor layer21.
REFERENCES:
patent: 5784131 (1998-07-01), Kim et al.
patent: 6515720 (2003-02-01), Iizuka et al.
patent: 2003/0202267 (2003-10-01), Yamasaki et al.
Erdem Fazli
Flynn Nathan J.
Toshiba Matsushita Display Technology Co., Ltd.
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