Methods for forming an assembly for transfer of a useful layer

Details Methods for forming an assembly for transfer of a useful layer Methods for forming an assembly for transfer of a useful layer

2006-10-17

2006-10-17

Osele, Mark A. (Department: 1734)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

C156S257000, C156S267000, C427S275000, C438S458000

Reexamination Certificate

active

07122095

ABSTRACT:
Methods for forming an assembly for transfer of a useful layer are described. In an embodiment, the method includes forming a useful layer on a first support having an interface therebetween, and a residual material on a portion of the first support to form the assembly, and processing the assembly to attenuate any bond between the useful layer and the first support caused by the residual material. An implementation of the method includes processing the assembly to remove residual material. In another variation, processing of the assembly includes forming at least one cut or separating channel between a free surface of the useful layer and the interface to separate the useful layer from contact with the residual material. In yet another variation, processing of the assembly includes forming a peripheral recess so that the residual material does not contact the useful layer.

REFERENCES:
patent: 5156896 (1992-10-01), Katoh et al.
patent: 5391257 (1995-02-01), Sullivan et al.
patent: 5514425 (1996-05-01), Ito et al.
patent: 5863830 (1999-01-01), Bruel et al.
patent: 6100166 (2000-08-01), Sakaguchi et al.
patent: 6177359 (2001-01-01), Chen et al.
patent: 6287891 (2001-09-01), Sayyah
patent: 6316333 (2001-11-01), Bruel et al.
patent: 6335258 (2002-01-01), Aspar et al.
patent: 6376332 (2002-04-01), Yanagita et al.
patent: 6406636 (2002-06-01), Vaganov
patent: 6448155 (2002-09-01), Iwasaki et al.
patent: 6465327 (2002-10-01), Aspar et al.
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6548338 (2003-04-01), Bernstein et al.
patent: 6562648 (2003-05-01), Wong et al.
patent: 6586044 (2003-07-01), Takeshita et al.
patent: 6624047 (2003-09-01), Sakaguchi et al.
patent: 6673694 (2004-01-01), Borenstein
patent: 6700631 (2004-03-01), Inoue et al.
patent: 6727549 (2004-04-01), Doyke
patent: 6767763 (2004-07-01), Uchiyama
patent: 6809009 (2004-10-01), Aspar et al.
patent: 2001/0055854 (2001-12-01), Nishida et al.
patent: 2002/0042189 (2002-04-01), Tanaka
patent: 2002/0081822 (2002-06-01), Yanagita et al.
patent: 2002/0096717 (2002-07-01), Chu et al.
patent: 2002/0132451 (2002-09-01), Akino et al.
patent: 2003/0234075 (2003-12-01), Aspar et al.
patent: 0 106 566 (1989-11-01), None
patent: 0 977 252 (2000-02-01), None
patent: 1059663 (2000-12-01), None
patent: 2811807 (2002-01-01), None
patent: 3106052 (1991-05-01), None
patent: 6229849 (1994-08-01), None
patent: 10320851 (1998-12-01), None
patent: WO 01/04933 (2001-01-01), None
patent: WO 02/05344 (2002-01-01), None
patent: WO 03/081664 (2003-10-01), None
S. Kodama et al., XP-00935156 “Variable Threshold A1GaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gated Gabricated Using the Wafer-Bonding Technique”, vol. 241ga, p. 434-435 (19099).

Affiliated with

Also associated with

Rating

Methods for forming an assembly for transfer of a useful layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for forming an assembly for transfer of a useful layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming an assembly for transfer of a useful layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3648620