Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate
2006-08-08
2006-08-08
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Addressing
Plural blocks or banks
C365S185210, C365S205000, C365S222000
Reexamination Certificate
active
07088637
ABSTRACT:
A semiconductor memory device having a high speed for a data transmission includes a plurality of cell blocks, each having a plurality of unit cells for storing data; a plurality of local bit line sense amplifying block, each for sensing and amplifying the data stored in the N number of cell blocks; a global bit line sense amplifying block for latching the data amplified by the local bit line sense amplifying blocks; and a data transferring block for transmitting the data from the local bit line sense amplifying block to the global bit line sense amplifying block.
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patent: 2004/0240291 (2004-12-01), Kang
Ahn Jin-Hong
Hong Sang-Hoon
Kim Se-Jun
Ko Jae-Bum
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Tran Anthan
Zarabian Amir
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