Masks for use in optical lithography below 180 nm

Details Masks for use in optical lithography below 180 nm Masks for use in optical lithography below 180 nm

2006-10-17

2006-10-17

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reissue Patent

active

RE039349

ABSTRACT:
A mask for use on a layer of imaging material which is located on at least a portion of one surface of a substrate in a lithography process in accordance with one embodiment of the present invention includes a layer of a masking material which has an optical density of at least 4.0 for wavelengths at or below about 180 nm and a thickness of less than about 1000 angstroms. Materials, such as tungsten and amorphous silicon, can be used for the mask.

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patent: 5679484 (1997-10-01), Ito et al.
patent: 5780161 (1998-07-01), Hsu
patent: 5962174 (1999-10-01), Pierrat
patent: 5963841 (1999-10-01), Karlsson et al.
patent: 6027815 (2000-02-01), Hsu
patent: 6040892 (2000-03-01), Pierrat

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