Radiation hardened field effect device

Details Radiation hardened field effect device Radiation hardened field effect device

1976-12-08

1977-08-16

Wojciechowicz, Edward J.

357 23, 357 29, 357 28, 357 78, H01L 2978, H01L 2966, H01L 2336, G01T 124

Patent

active

040429466

ABSTRACT:
A semiconductor device which utilizes metallic electrodes whose work function can be altered so as to render the device insensitive to the harmful effects caused by exposure to a hostile radiation environment or other events which deleteriously influence the threshold voltage. The gate electrodes of the device consist of materials whose work function is changed by either desorbing or absorbing hydrogen. Depending upon whether the hydride has a larger or smaller work function than the unhydrated material, the invention desorbs or absorbs hydrogen in response to a signal from a sensing circuit which is activated by changes in the threshold voltage of the device.

REFERENCES:
review of Scientific Instruments - vol. 47, No. 6, pp. 738-740, June 1976, undstrom et al.

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