Semiconductor devices having a hybrid channel layer, current...

Details Semiconductor devices having a hybrid channel layer, current... Semiconductor devices having a hybrid channel layer, current...

2006-08-01

2006-08-01

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S194000, C257S219000

Reexamination Certificate

active

07084441

ABSTRACT:
Transistors and/or methods of fabricating transistors that include a source contact, drain contact and gate contact are provided. In some embodiments, a channel region is provided between the source and drain contacts and at least a portion of the channel regions includes a hybrid layer comprising semiconductor material. In particular embodiments of the present invention, the transistor is a current aperture transistor. The channel region may include pendeo-epitaxial layers or epitaxial laterally overgrown layers. Transistors and methods of fabricating current aperture transistors that include a trench that extends through the channel and barrier layers and includes semiconductor material therein are also provided.

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