Alignment method and exposure apparatus using the method

Details Alignment method and exposure apparatus using the method Alignment method and exposure apparatus using the method

2006-08-29

2006-08-29

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C250S492220, C430S030000

Reexamination Certificate

active

07098046

ABSTRACT:
A method for aligning existing layers formed prior to a new layer and the new layer in forming the new layer on a wafer4, wherein a microscope6as a first measurement condition and a microscope7as a second measurement condition are used, and marks4aand4bformed in each of said existing layers are measured by switching the first and second conditions, and said existing layers and said new-layer are aligned based on measurement of mark position of each of said existing layers, and the microscope7has a plurality of measurement conditions as optical characteristics, and the measurement conditions are switched.

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