Semiconductor device and method for producing the same

Details Semiconductor device and method for producing the same Semiconductor device and method for producing the same

2006-10-17

2006-10-17

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S528000, C257S516000, C257SE23144

Reexamination Certificate

active

07122877

ABSTRACT:
A semiconductor device of the present invention includes a semiconductor substrate including an active region and an isolating region provided so as to enclose the active region; a capacitance insulating film that is provided on the active region and is in contact with the isolating region; an upper electrode provided on the capacitance insulating film so as to be spaced away from the isolating region; an electrode pad provided on the isolating region; a lead conductive film provided over a part of the capacitance insulating film and a part of the isolating region for connecting the upper electrode and the electrode pad; and an interlayer insulating film provided over the substrate. Connection holes penetrating the interlayer insulating film to reach the electrode pad are formed, and the ratio (S/L) of the total sum (S) of exposed areas of the electrode pad in the contact holes with respect to the total sum (L) of lengths of the boundary line in an overlapping portion of the boundary line and the lead conductive films is adjusted such that the breakdown ratio of the capacitance insulating film is substantially zero, the boundary line being between the capacitance insulating film and the isolating region.

REFERENCES:
patent: 5691556 (1997-11-01), Saito et al.
patent: 6084271 (2000-07-01), Yu et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3644052