Semiconductor waveguide device

Details Semiconductor waveguide device Semiconductor waveguide device

2006-02-14

2006-02-14

Kim, Ellen E. (Department: 2874)

Optical waveguides

Temporal optical modulation within an optical waveguide

Electro-optic

C385S129000, C385S132000

Reexamination Certificate

active

06999638

ABSTRACT:
A semiconductor waveguide device includes a lower clad layer, an upper clad layer, an optical waveguide layer interposed between the lower clad layer and the upper clad layer, and a lower electrode and an upper electrode for applying a voltage to a laminated structure including the lower clad layer, the optical waveguide layer, and the upper clad layer. Light is made incident from an end face of the optical waveguide layer. The upper clad layer includes a stripe-like width-narrowed portion, and a width-broadened portion formed at a position closer to a light-incident end face than the width-narrowed portion and having a width wider than the width-narrowed portion.

REFERENCES:
patent: 5987046 (1999-11-01), Kobayashi et al.
patent: 6167070 (2000-12-01), Sakata
patent: 07-230067 (1995-08-01), None
patent: 11-202274 (1999-07-01), None
patent: 2001-091913 (2001-04-01), None
patent: 2001-117058 (2001-04-01), None

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