Semiconductor light emitting device capable of suppressing...

Details Semiconductor light emitting device capable of suppressing... Semiconductor light emitting device capable of suppressing...

2006-11-28

2006-11-28

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S081000, C257S079000, C257S098000, C257S099000, C257SE33072

Reexamination Certificate

active

07141825

ABSTRACT:
A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers. The second layer is removed to expose the first layer in a first area which is a partial surface of the first layer. A p-side electrode is disposed on a surface of the second layer and electrically connected to the second layer. An insulating film covers the p-side electrode. An n-side electrode electrically connected to the first layer is disposed in the first area. A reflection film disposed on the insulating film extends to the n-side electrode and electrically connected to the n-side electrode. The reflection film is made of silver containing alloy or silver.

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T. Takemoto et al “High Reliability Micro Soldering Techniques” Kogyou Chousaki Publishing Co. Ltd., Tokyo, Japan; pp. 360-375, Jan. 21, 1991.

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